DRDO Demonstrates Indigenous GaN-on-Silicon-Carbide Chip for Radar and Electronic Warfare

India's Defence Research and Development Organisation (DRDO) has demonstrated an indigenously developed Gallium Nitride (GaN) semiconductor technology for high-frequency electronics, according to the Ministry of Defence's annual report for 2025-26. The GaN-on-Silicon Carbide (SiC) technology is intended to underpin next-generation electronic warfare systems, military radars and unmanned platforms.

At the core of the advance is a compact, indigenously designed GaN microchip measuring just 3.5 by 3 millimetres. It can output up to 30 watts of power while operating up to 300 times faster than legacy silicon-based chips, according to the report. Unlike silicon or gallium arsenide, GaN semiconductors can sustain high power densities and voltages while withstanding extreme temperatures with greater thermal conductivity.

The report confirmed fabrication and demonstration of X-band Monolithic Microwave Integrated Circuits (MMICs) and S-band GaN High Electron-Mobility Transistor (HEMT) power amplifiers, along with low-noise amplifiers and switch MMICs — components used in radar transmitters and electronic-warfare jamming systems. DRDO's Solid State Physics Laboratory (SSPL) developed the processes to grow and manufacture 4-inch silicon carbide wafers, and fabricated GaN HEMTs delivering up to 150 watts and MMICs reaching 40 watts for X-band use.

Limited production lines for the GaN-on-SiC circuits have been set up at the Gallium Arsenide Enabling Technology Centre (GAETEC) in Hyderabad. The components are also intended for aerospace systems, 5G networks and satellite communications. GaN technology is tightly export-controlled internationally, and India has so far relied heavily on imports for these components.

The Ministry is also working with the private sector to expand the ecosystem: under the Innovations for Defence Excellence (iDEX) initiative, it signed a contract with Agnit Semiconductors Private Limited in December 2023 to design and manufacture GaN wireless transmitters.